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Compensation of Oxygen Doping in p‐Type Organic Field‐Effect Transistors Utilizing Immobilized n‐Dopants
Compensation of Oxygen Doping in p‐Type Organic Field‐Effect Transistors Utilizing Immobilized n‐Dopants
2020
Marc‐Michael Barf
Frank S. Benneckendorf
Patrick Reiser
Rainer Bäuerle
Wolfgang Köntges
Lars Peter Müller
Martin Pfannmöller
Sebastian Beck
Eric Mankel
Jan Freudenberg
Daniel Jänsch
Jean‐Nicolas Tisserant
Robert Lovrincic
Rasmus R. Schröder
Uwe H. F. Bunz
Annemarie Pucci
Wolfram Jaegermann
Wolfgang Kowalsky
Klaus Müllen
Keywords:
Field-effect transistor
Optoelectronics
oxygen doping
Materials science
Dopant
Correction
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