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Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering
Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering
2019
Elmira Shahrabi
Cecilia Giovinazzo
Mahmoud Hadad
Thomas LaGrange
Miguel Ramos
Carlo Ricciardi
Yusuf Leblebici
Keywords:
Kinetics
Resistive random-access memory
Optoelectronics
Tungsten
Materials science
interface engineering
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