Wide Emission Spectra from Multi-stack InGaAs Quantum Dots

T. E. Tzeng,David Jui-Yang Feng,T. S. Lay,T. Y. Chang

Wide Emission Spectra from Multi-stack InGaAs Quantum Dots

2007

T. E. Tzeng
David Jui-Yang Feng
T. S. Lay
T. Y. Chang

Multi-layer InGaAs quantum dots have been grown and investigated to have 165 nm broad-band emission at lambda=1300 nm by tailoring the In and Ga compositions for the dots and caps in the stacked layers.

Keywords:

Optics
Physics
Optoelectronics
Light-emitting diode
Gallium arsenide
Indium gallium arsenide
Photoluminescence
Stimulated emission
Quantum dot
Indium phosphide
Emission spectrum
Electroluminescence

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