193-nm thin-layer imaging performance of 140-nm contact hole patterning and DOE dry development process optimization of multilayer resist process

Thin Layer Imaging (TLI) technique offers opportunity for lithographic performance gain as well as issues relating to its complexity of the process. Of those improvement possibilities, utilizing hyper fine resolution one can gain using very thin ( 1 equals 0.44, including true dense, 1:1 arrays) contact hole printing results (lithographic performance including resolution, focus/exposure latitudes, proximity effects) using standard binary chrome-on-quartz mask as well as the subsequent pattern transfer process optimization. The lithographic exposure was performed on a 10X ISI microstepper operating at 193 nm ArF laser source located at the RTC (Resist Test Center) of the International Sematech. The dry development DOE experiments were performed on a LAM TCP9400PTX inductively coupled plasma (ICP) etch chamber also residing at the RTC. The effect of process conditions (TCP power, bias power, O 2 /SO 2 gas flow/ratio, and chamber pressure and chuck temperature) on the integrity of pattern transfer (etch rate, selectivity, CD bias, side wall profile) were investigated by full factor designed experiments.