High-power flip-chip blue light-emitting diodes based on AlGaInN

The design and fabrication of a high-power light-emitting diode chip that has an active-region area of 1 mm2 and emits at a wavelength of 460 nm are described. The chip structure is developed on the basis of numerical simulation and is intended for flip-chip assembly. The use of two-level interconnections for an n-type contact made it possible to obtain an unprecedentedly low series resistance (0.65 Ω) and a high uniformity of pump-current distribution. Light-emitting diodes based on the developed design operate in the continuous-wave mode in a current range of 0–2 A, and their highest emission power is 430 mW.