Reactive ion etching of Al x Ga 1−x N/GaN heterostructure using Cl 2 , BCl 3 /Ar gas plasma

The etching processes were carried out in Oxford Instruments Plasmalab80Plus system. Present work is concentrating on discussion of a scope of different Al x Ga 1−x N/GaN heterostructures in relation to percentage composition of aluminum. The topography of heterostructure surface and slope was controlled using AFM technique.