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G(m.max)=1441mS/mmによるAs EMT100nmゲートin(0.52)Al(0.48)As/In(0.7)Ga(0.3)のf_T=260GHzおよびf(max)=607GHz【Powered by NICT】
G(m.max)=1441mS/mmによるAs EMT100nmゲートin(0.52)Al(0.48)As/In(0.7)Ga(0.3)のf_T=260GHzおよびf(max)=607GHz【Powered by NICT】
2016
Wang Qing
Ding Peng
Su Yongbo
Ding Wuchang
Muhammad Asif
Tang Wu
Jin Zhi
Keywords:
Condensed matter physics
Electronic engineering
Engineering
Discrete mathematics
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