Facile Optimization Method for the Passivation Layer Preparation in Silicon Heterojunction Solar Cell by Monitoring Its Growth Rate

Based on the passivation performance and the growth rate of the passivation layer as functions of the deposition conditions: deposition pressure, deposition power, SiH 4 flow rate, and wafer temperature, a facile method was proposed to optimize the deposition condition for the passivation layer preparation during the a-Si/c-Si heterojunction solar cell fabrication. It is to monitor the growth rate R of the passivation layer and calculate its second-order derivative with regard to the corresponding deposition parameter. When the second-order derivative of R presents an extremum, the corresponding value of the deposition parameter can be determined as the optimized choice.