Polishing solution capable of realizing quick polishing

The invention discloses a polishing solution capable of realizing quick polishing and belongs to the field of chemical-mechanical polishing. The polishing solution mainly comprises silicon dioxide abrasive particles, an alkaline corrosive agent, a polyether amine stabilizer and soluble salt. The electric conductivity of the polishing solution is grater than 30ms/cm; based on a strong electrolysis effect of the polishing solution under a polyelectrolyte condition, insoluble substances in the polishing process can be decomposed and taken away in time, a high-activity silicon wafer surface and a non-residual polishing cloth surface can be maintained all the time and insoluble substances in the polishing process can be removed stably and quickly. The removal rate of the polishing solution disclosed by the invention is above 1.5mu m/min, which is 1.5 times as high as that of a common commercial polishing solution under the same process condition.