Patterning chemistry of HafSOx resist

A combination of ICP-OES, titration, and Raman spectroscopy was used to determine the ratio of peroxide to hafnium in the inorganic photoresist HafSOx. By using ICP-OES to determine the hafnium concentration and titration with permanganate to determine peroxide in a solution of dissolved films, the Hf:O 2 2- ratio was found to be approximately 2:1 in the films. From Raman measurements on precursor solutions, it was determined that that Hfbound peroxide saturated at this level. Film insolubility is induced through loss of approximately 75% of bound peroxide following exposure to a 30-keV electron beam.