Method and apparatus for casting a single crystal silicon ingot

The present invention discloses a method of casting a single crystal silicon ingot, also discloses a device for casting a single crystal silicon ingot. The method of the present invention is obtained using the initial local solidification nuclei, the method induces growth and the growth and melting steering initial seed nuclei obtained by solidifying gradually expanded region, and the seed crystal grown to cover the bottom of the crucible, and let the seed growth transition directional solidification, thereby preparing a low dislocation density single crystal silicon ingot. The present invention does not require the use of a long rod crystal, easy to control the casting process, the seed does not need to reduce the cost.