Interface response theory of N-layered discrete semiconductor superlattices

The authors have applied for the first time a recent interface response theory to superlattices formed out of a periodic repetition of N different discrete semiconductor slabs. General expressions for the interface response functions are obtained. A simple application to an exactly solvable model of two-, three- and four-layered semiconductor superlattices illustrates this new general theory. In particular, the bulk dispersion relations of electrons in a three-layered GaSb-AlSb-InAs semiconductor superlattice are calculated.