Full and partial polarization switching characteristics of sol-gel derived Pb(ZrxTi1-x)O3 thin films

Abstract In this study, polarization switching characteristics of Pb(Zr x Ti1-x )O3 (PZT) thin films were investigated. Switching times (t s) were found to be decreased as the Zr mol% was increased. But, the switching peak currents (I max) showed the largest value at 50 mol% Zr. As a result of this experiment, t s was found to be depended on the remanent polarization and coercive field and also I max strongly depended on the dielectric constant of PZT thin films. In order to investigate the partial switching kinetics of PZT thin films, short and relatively small voltage pulses were applied to the MFM (metal-ferroelectric-metal) PZT capacitors and polarization switching curves were measured with a variation of the total width of the applied pulses. Also, the switching curves were measured at different applied voltages (4, 8, 10, 12 and 14 V). As the applied voltages increased t s and I max were found to be decreased and increased, respectively. In case of fatigued specimen which we applied ± 10 V square pu...