Dielectric properties of A- and B-site doped BaTiO3(II):La- and Ga-doped solid solutions
2005
Extremely small amounts of codoping La and Ga on the A and B sites of BaTiO3, respectively, resulting in a solid solution of the type Ba1−3xLa2xGa4xTi1−3xO3, have been investigated. The compounds have been prepared by conventional solid-state reaction. The x-ray diffraction (XRD) shows the presence of the tetragonal (P4∕mmm) phase only. The XRD data have been analyzed using the FULLPROF Rietveld refinement package. The compositions have been characterized by dielectric spectroscopy between room temperature and 200°C. The resulting compounds (0⩽x⩽0.008) exhibit a remarkable decrease in Curie temperature as well as a significant enhancement in the dielectric constant.
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