Formation of buried SiO2 layer by oxygen implanted into Si/Ge and Si/Si0.5Ge0.5 substrates

The formation of buried SiO2 layer by high‐dose oxygen implanted into Si/Ge and Si/Si0.5Ge0.5 heterostructures is studied by infrared transmission and x‐ray photoelectron spectroscopy. The results show that the Ge in the implanted region has no influence on the bonding properties of oxygen, and there exists a critical annealing temperature of about 1250 °C for all the implanted oxygen to be bonded as SiO2.