The simulations research of termination structure for three dimensional particle pixel radiation detector

In this paper, an improved termination structure is proposed to increase the breakdown voltage based on the advanced silicon-on- insulator complementary metal-oxide-semiconductor transistor (SOI CMOS) particle pixel (ASCP) detector. Two-dimensional (2D) and three-dimensional (3D) physical level simulations are presented. The results illustrate that the back trench termination is adopted in the presented termination structure, and the trench would produce an electric field peak, which is symmetrical with that of bottom N+ trench. Compared with the conventional 3D pixel active-edge termination, the proposed termination has the better electric field diffusion, and the higher breakdown voltage. The proposed termination has the similar pixel charge collection efficiency with that of active-edge termination during the radiation situation from 0 to 10 16 cm -2 . In addition, we have studied the particle angle charact- eristics for ASCP detector.