First demonstration of heat dissipation improvement in CMOS technology using Silicon-On-Diamond (SOD) substrates

We have fabricated Silicon-On-Diamond (SOD) substrates on which, for the first time, we integrated n and p Fully Depleted MOSFETs high-K/metal gate down to 200nm gate length. The devices show excellent electrical characteristics and a 57% improvement of the thermal resistance compared to the co-processed one on standard SOI.