Old Web
English
Sign In
Acemap
>
Paper
>
プラズマ原子層堆積法で300°C低温形成した強誘電体Hf x Zr 1-x O 2 薄膜の疲労特性
プラズマ原子層堆積法で300°C低温形成した強誘電体Hf x Zr 1-x O 2 薄膜の疲労特性
2020
onna ya suu
namatame tosihide
Y . C . Jung
H Hernandez-Arriaga
J. Mohan
H S Kim
A Khosravi
sawamoto naomi
nagata takahiro
R.M. Wallace
J. Kim
ogura atusi
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]