Old Web
English
Sign In
Acemap
>
Paper
>
Modeling of resonant-tunneling diodes I-V characteristics kinetics under destabilizing factors influence
Modeling of resonant-tunneling diodes I-V characteristics kinetics under destabilizing factors influence
2019
Kirill V Cherkasov
S. A. Meshkov
M. O. Makeev
Yu. A. Ivanov
N. A. Vetrova
N. V. Fedorkova
Keywords:
Diode
Kinetics
Quantum tunnelling
Condensed matter physics
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]