Luminescence properties of Si nanocrystals fabricated on Si substrate by pulsed laser deposition

Abstract Si nanocrystals on p-type (1 0 0) Si substrates have been fabricated by pulsed laser deposition (PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si nanocrystals have been annealed again in various gases. Nitrogen and oxygen have been used. Strong violet–indigo photoluminescence (PL) have been observed from Si nanocrystals annealed in nitrogen ambient gas. As the gas pressure during the deposition is varied, weak green and red emissions from annealed Si nanocrystals are also observed in the PL.