Influence of Small Doses of Gamma Irradiation on Transport and Noise Properties of SiC MESFETs

Steady‐state characteristics and low‐frequency noise spectra of SiC‐based metal‐semiconductor field‐effect transistors (MESFETs) before and after small doses (1×106 rad) of gamma radiation treatment are studied. The structural ordering of non‐controllable impurities with radiation leads to an increase in threshold voltage, decrease of the channel’s resistance and reduces the number of G‐R components observed in the total noise spectra of the devices.