The polaron in a GaAs film deposited on AlxGa1−xAs influenced by the thickness of the substrate

Abstract The binding energy and the effective mass of a polaron confined in a GaAs film deposited on the Al x Ga 1− x As substrate for different aluminum concentration at different values of film thickness are studied theoretically by using the fractional–dimensional space approach. Analytical expressions allowing a very simple estimation of the corresponding polaron binding energy and mass shift are found. The numerical results for the polaron binding energy and mass shift as functions of the substrate thickness in the GaAs film deposited on the Al x Ga 1− x As substrate structure are obtained. It is shown that the polaron binding energy and mass shift for different aluminum concentration at different values of film thickness exhibit a maximum.