1/f noise in 0.18 μm technology n-MOSFETs from subthreshold to saturation

Abstract Low frequency noise in 0.18 μm technology n-MOSFETs is investigated in subthreshold, ohmic and saturation regimes. The impact of the channel length on the drain current noise characteristics is studied. The results are analysed as a function of the drain current or gate voltage and compared to the existing noise models. We find that the 1/ f noise can be interpreted in terms of carrier number fluctuations. The oxide trap density N t at the Fermi energy level is evaluated. The significant deviation of the normalised noise amplitude observed at high V GS is attributed to the noise in the access resistances. In deep saturation regime, for gate length device