Sram device and method

Example discloses a SRAM device and a manufacturing method of the present invention. The SRAM device comprising: a substrate; a well region of the substrate, the well region is a shallow trench isolation apart; in the well region, the shallow trench adjacent the source region; disposed in said interlayer dielectric, said dielectric layer within the contact hole to the source region connected to the well region on the interlayer, the contact hole in the direction of the source region and a shallow trench region so that the source connection symmetrical distribution. The present invention provides an SRAM device, the drain generated at the edge of the device is smaller, the higher the device yield.