High performance visible-near-infrared PbS-quantum-dots/indium Schottky diodes for photodetectors

Here we fabricate self-powered photodetectors based on PbS-quantum-dots/indium Schottky barrier diodes successfully. These devices exhibit excellent repeatability and stability at a high frequency (up to1 MHz), and show a typical fast rise time/fall time of ~0.8 μs/3.2 μs. They also show excellent rectification ratios up to 104 with bias from −0.5 V to +0.5 V in the dark and a pronounced photovoltaic performance under light illumination. Moreover, the devices demonstrate high sensitivity in weak light illumination detection (detectivity) approaching 1012 Jones and low noise currents <1 pAHz−1/2. These findings suggest great application potential of PbS-quantum-dots for advanced fast response, low noise current, high detectivity and high stability photodetectors.