Class F and Inverse Class F Dual Modes Dual Bands Power Amplifier

In this paper, the design and implementation of a dual bands power amplifier using gallium nitride (GaN) high electron mobility transistor (HEMT) is presented. A methodology of realizing Class F and Inverse Class F dual bands power amplifier output topology is proposed. With simulation and measurement verification, the dual bands power amplifier gets good performances in L band and S band, 1.4GHz and 2.1GHz respectively. At the P −2 point, the output powers are higher than 41.3dBm and 41.2dBm, and generate more than 72% and 69% drain efficiency in the two 200MHz operation bands. Simulation and measurement results agree well with each other, verified the concept and method proposed in the paper.