Fabrication and Characterization of p-CuSCN/n-Si Heterojunction Diode

The p-CuSCN /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal β-CuSCN films are polycrystalline nature. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuSCN/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 2.1 eV and 1.5 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuSCN/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuSCN/n-Si heterojunction is hole current.This heterojunction diode can be good used for light emission devices and photovoltaic devices.