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ELECTRICAL AND ATOM-SITE LOCATION PROPERTIES OF ION-IMPLANTED GERMANIUM.
ELECTRICAL AND ATOM-SITE LOCATION PROPERTIES OF ION-IMPLANTED GERMANIUM.
1970
A. W. Tinsley
K. C. Jones
P. R. C. Stevens
G. G. George
E.M. Gunnersen
Keywords:
Radiochemistry
Ion implantation
Germanium
Atom
Bismuth
Ion
Materials science
Atomic physics
Annealing (metallurgy)
Irradiation
Helium
Rutherford scattering
Correction
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