Preparation method of small-period array structure

The invention discloses a preparation method of a small-period array structure and relates to the technical field of two-dimensional micro-nano devices. The preparation method is used for preparing the small-period array structure on a substrate, and comprises the following steps: step 1, spin-coating photoresist on the substrate; step 2, scanning an exposed pattern on the photoresist through adopting an electron beam photoetching process, so as to obtain a photoresist pattern, wherein an exposed step length of the electron beam photoetching process is a large step length so as to guarantee that the photoresist between two electron beam spots is not exposed; step 3, transferring the photoresist pattern onto the substrate, so as to obtain a sample; step 4, putting the sample into photoresist removing liquid to obtain the small-period array structure on the substrate. By adopting the preparation method disclosed by the invention, the step length and dosage of electron beam exposure are controlled, and a small-period array pattern is formed on an electron beam exposure region in a process of scanning on the large-area pattern; the preparation method has the characteristics of rapidness in preparation, good controllability, low cost, capability of preparing in a large area and the like.