A new edge-defined approach for submicrometer MOSFET fabrication

A novel technique employing vertical (anisotropic) dry etching for fabricating edge-defined submicrometer MOSFETs is described, and preliminary results are presented. Three basic process techniques are employed: formation of an edge-defined submicrometer element, pattern transfer of the element into an underlying doped polysilicon gate layer, and passivation of the FET using a sidewall oxide. The submicrometer element formation technique is limited to linewidths in the 0.1 µm to 0.4 µm range. Characterization of MOSFETs, having physical channel lengths ∼0.1 µm to 0.15 µm and believed to be the world's smallest MOSFET's reported to date, is discussed.