μ-Raman Validated Stress-Enhanced Mobility in XtreMOS Transistors

In this paper it is unambiguously shown that integrated power transistors benefit from mobility enhancement due to strained silicon, an effect that is usually only reported for deep submicron CMOS. Experimental validation is done by mu-Raman spectroscopy (muRS) measurements on transistor cross-sections. The silicon stress is measured to be in the order of several hundreds of MPa, yielding a reduction in drift resistance (Ron) that depends on the trench spacing, and is maximum 25%. The paper highlights experimental muRS results and defect decorated cross-sections, as well as a thorough theoretical analysis of mobility enhancement as a function of layout parameters