ulsi fine wiring member having a ruthenium electroplating layer on the barrier layer

In particular coverage sidewall within via hole or trench is sufficient, the thickness of the surface portion is also uniform, and an object thereof to provide an ULSI fine wiring member having a seed layer is small impurity concentration. The object by copper electroplating subsequent utilizing the seed layer, ULSI fine wiring member formed with without generating fine wiring void, the forming method, and to provide a semiconductor wafer formed with the ULSI fine wiring to. ULSI having a substrate, in ULSI fine wiring member having a ULSI fine wiring formed on the substrate, ruthenium electroplating layer in which the ULSI fine wiring is formed on the barrier layer and is formed on a substrate fine wiring member, ULSI fine wiring member the ruthenium layer to form a copper electroplating layer as a seed layer, and a method of forming the same.