MBE growth of GaAs/AlAs double-barrier structures on GaAs channeled substrates

Abstract Overgrowth of GaAs and GaAs/AlAs heterostructures on GaAs channeled substrates by MBE was studied. Grooves along [01 1 ] were made on a (100) GaAs substrate by selective etching. There are two kinds of crystal planes on the substrate: a (100) plane (flat region) and a (111)A plane (slope region). We first demonstrated the resonant tunneling of electrons preferentially through a small (111)A slope region (12 μm wide) of GaAs/AlAs double-barrier structures grown on the channeled substrates.