Old Web
English
Sign In
Acemap
>
Paper
>
1/F Noise in MoS2 Field Effect Transistors with Channel Length Variation
1/F Noise in MoS2 Field Effect Transistors with Channel Length Variation
2015
Suprem R. Das
Jiseok Kwon
Jonathan C. Claussen
Shan Hu
David B. Janes
Keywords:
Field-effect transistor
Electronic engineering
Electrical engineering
Materials science
Communication channel
length variation
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]