Drift design impact on quasi-saturation & HCI for scalable N-LDMOS

In this paper, we discuss the scalable NLDMOS design in a 0.18μm HV-CMOS technology. The design impacts in quasi-saturation are compared between the 25V and 50V NLDMOS to demonstrate the implications in output and f T characteristics. The STI depth sensitivity in DC, ac and HCI characteristics is investigated. The results prove a very robust design, featuring dlin shift over 10 year lifetime for +/−10% STI depth variations.