IGBT module packaging structure of inverter

The invention discloses an IGBT module packaging structure of an inverter. The positive input end and the negative input end of each half-bridge IGBT module are respectively arranged on the lower surface of a chip. A buffer capacitor can be respectively welded on the surfaces of the positive input end area and the negative input end area on the surface of a first insulation ceramic substrate, thereby maximally eliminating pin inductance of the IGBT module through short-circuit. An E pole of an upper half-bridge IGBT chip and a C pole of the lower half-bridge IGBT chip of each half-bridge IGBT module are respectively arranged on the upper surface of the chip, and can be located far from a water cooling board, thereby reducing an equivalent parasitic capacitance, reducing earth common-mode interference current, and improving EMC performance of the inverter. A binding line of each phase half-bridge IGBT module is saved, thereby improving current capability and prolonging service life time, reducing chip area and lowering inverter cost. Electric pins of each phase half-bridge IGBT module are directly welded on the insulation ceramic substrate and a chip. The distances among the positive input end, the negative input end and phase output pin of each phase half-bridge IGBT module are small, thereby realizing short outlet wire of the inverter, simplifying wiring and ensuring no easy heating of an inner chamber by copper bars.