Emergence of SiC Thyristors Featuring Amplifying Gate Design

This paper will highlight ISL's research activities aimed at high-power SiC-based thyristor switching devices. With the emergence and implementation of novel gate architectures large-area devices will come within reach in the near future. In this context, we report on SiC thyristors fabricated on wafer substrates, featuring an integrated amplifying gate structure: as a result, primary device functioning was established on wafer; on-state and blocking characteristics have been verified so far up to 0.1 A and-20 V, respectively. Herewith, an innovative technology platform is emerging which allows for the development of SiC devices for operational scenarios such as high temperature, harsh environment, and ultra-high (> 10 kV) voltages.