Study on high growth-rate deposition of nanocrystalline silicon thin film with VHF-PECVD

Using the self-consistent one dimensional fluid model,equations of particle-balance,momentum,charged particle flux and current continuum have been established to study the behavior of chief particles in low-pressure very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).The influence of VHF(very high frequency) has been analyzed and the profiles of SiH3- negative,electrons,SiH3+ positive density have been obtained.The simulation results show that the density of SiH3- negative changes with frequency and consequently the frequency controls the particle nucleation and growth;meanwhile,the densities of electron,SiH3+ positive and the electric field intensity also vary with frequency,so that the chemical reaction and the nanoparticle deposition are accelerated.