High-Q and high-Coupling gated silicon nitride drum resonators.

Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is still a challenge for them to achieve efficient electrical integration on-chip due to weak coupling with surrounding electrical circuits. Here, we present a SiN drum resonator covered with an aluminum thin film, enabling large capacitive coupling to a suspended top-gate. Implementing the full electrical measurement scheme, we demonstrate a high quality factor ~1E4 comparable to bare drums at room temperature and present our ability to detect ~10 mechanical modes at low temperature. The drum resonator is also coupled to a microwave cavity, which enables to do optomechanical sideband pumping with fairly good coupling strength G and to perform the mechanical parametric amplification through the gate. This SiN drum resonator design provides efficient electrical integration and exhibits promising features for exploring mode coupling and signal processing.