Influence of the Rotation Frequency of a Disk Substrate Holder on the Crystal Structure Characteristics of MOCVD-Grown GaAs Layers

The influence of the rotation frequency of a disk substrate holder on the growth mechanism and crystal structure characteristics of MOCVD-grown GaAs layers has been studied. In the frequency range of 0–400 rpm, variations have been observed in the growth mechanism and rate, as well as of crystal perfection.