Using Channel Physical Relationships in pHEMT Modeling

Yingying Yang,Xiao-Ping Li,C. Cismaru,Ravi Ramanathan

Using Channel Physical Relationships in pHEMT Modeling

2020

Yingying Yang
Xiao-Ping Li
C. Cismaru
Ravi Ramanathan

In this paper, we establish relationships of a few key process control monitors (PCMs) based on device physics and a design of experiment (DOE); these relations can simplify the pHEMT device model and increase its accuracy.

Keywords:

Process control
Communication channel
Key (cryptography)
High-electron-mobility transistor
Design of experiments
Electronic engineering

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