Advanced layer-by-layer deposition and annealing process for high-quality high-K dielectrics formation

We propose a layer-by-layer deposition and annealing (LL-D&A) process for high-k gate dielectrics formation. In the LL-D&A process, ALD deposition and subsequent annealing are repeated to achieve a given target thickness. While this process is effective both for reducing residual impurities and for forming denser films as compared to conventional ALD, it also enables to implement tailor-made nitrogen profiles in the gate dielectrics by insertion of annealing cycles in NH 3 . To demonstrate the validity of the LL-D&A concept, we have developed a multichamber system that combines an ALD reactor with a rapid thermal annealing (RTA) furnace. Characteristics of the MIS capacitors show that the LL-D&A process improves the electrical properties of HfAlO x dielectrics.