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Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN
Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN
2019
Kazuki Ohnishi
Shigeyuki Kuboya
Tomoyuki Tanikawa
Takuya Iwabuchi
Kazuya Yamamura
Noriyuki Hasuike
Hiroshi Harima
Tsuguo Fukuda
Takashi Matsuoka
Keywords:
Reuse
Optoelectronics
Analytical chemistry
Epitaxy
Physics
Halide
vapor phase
Correction
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