Electrode in semiconductor device, capacitor and method for fabricating the same

PURPOSE: An electrode in a semiconductor device is provided to improve the leakage current characteristic and an adhesive force of a dielectric layer by forming an electrode including a Ni film containing an impurity. CONSTITUTION: An electrode of a semiconductor device comprises a Ni film. The Ni film contains the impurity. The impurity comprises carbon or hydrogen. The impurity of the Ni film has the content of 5% ~ 50%. A capacitor comprises a first electrode, a dielectric layer, and a second electrode. At least one of the first electrode or the second electrode contains the impurity.