Modeling the 3D In profile of In x Ga1−x As/GaAs quantum dots

An iterative procedure, based on the finite-elements method combined with a stochastic approach, was developed to calculate the energy levels of In x Ga1−x As/GaAs quantum dots grown by molecular-beam epitaxy. The vertical and radial In-composition profiles resulting from segregation and intermixing effects were taken into account. Two In profiles suggested in the literature were tested and compared to optical and structural data. One of them was shown to be compatible with the experimental data.