Growth and layer structure optimization of 2.26 μm (AlGaIn)(AsSb) diode lasers for room temperature operation

The optimization of MBE growth conditions and layer structures for room temperature operation of 2.26mm AlGaAsSb/GaInAsSb laser structures is investigated. Index guided triple quantum well large optical cavity diode lasers with 64mm � 1000mm cavities and high reflection/antireflection coated facets reveal a cw output power of 350 mW at T ¼ 280 K. An internal quantum efficiency Zi of 69%, internal losses ai of 7.7 cm � 1 and a threshold current density for infinite cavity length of j1 ¼ 144 A/cm 2 are obtained for this structure. # 2001 Elsevier Science B.V. All rights reserved.