Resonant electron tunneling in ZnSe/BeTe double‐barrier, single‐quantum‐well heterostructures

We report on resonant tunneling through ZnSe/BeTe double‐barrier, single‐quantum‐well structures. Negative differential resistance has been observed in the current–voltage characteristics up to room temperature. Due to a conduction‐band offset of more than 2 eV, four resonances with negative differential resistance could be detected for this semiconductor material combination at liquid‐helium temperature. The structures exhibit a peak‐to‐valley ratio up to 6:1 at 4.2 K. Current–voltage characteristics as a function of temperature have been studied and analyzed.