Combination of YBa/sub 2/Cu/sub 3/O/sub 7- delta / with semiconducting substrates

Epitaxial YBa/sub 2/Cu/sub 3/O/sub 7- delta / films were grown on silicon and gallium arsenide substrates. The common problem of strong interdiffusion at the elevated deposition temperatures was solved by employing appropriate buffer layers. The large differential thermal expansion between silicon and YBa/sub 2/Cu/sub 3/O/sub 7- delta /, which can lead to a fracture of thicker films, was addressed by improving the fracture toughness of the films. Arsenic contamination of films on GaAs, originating from the sides and the back of the wafer, was completely solved by a proper encapsulation, yielding YBa/sub 2/Cu/sub 3/O/sub 7- delta / films comparable to those on standard substrates. >