A noble metallization process using Preferential Metal Deposition (PMD)-aluminum with methylpyrroridine alane (MPA)

A noble Al precursor of methylpyrooridine alane (MPA) showed excellent stabilities and lifetime compared to any other Al precursor. The preferential Metal Deposition (PMD)-Al, which used a CVD-Al process with MPA, showed excellent contact fill and electrical properties, which implied that PMD-Al using MPA can be applied to a ULSI DRAM metallization process, such as metal contact and via holes.