Stepped Current-Voltage Relation and THz Oscillations in GaN MOSFET Due to Optical Phonon Emission: Monte Carlo simulation

Electron transport and drain current noise in wurtzite GaN MOSFET have been studied by Monte Carlo particle simulation that simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. It is shown that at positive gate voltages giving excess electron concentration in the n-region of the channel, drain current self-oscillations in the THz frequency range up to 6 THz are possible. These self-oscillations are driven by an electron plasma instability. Additionally a step-like drain current dependence on drain bias is demonstrated.